Modelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB Measurements (2024) Cornigli D, Schlichting H, Becker T, Larcher L, Erlbacher T, Pešić M Journal article Plasma Treatment after NiSi-Based Ohmic Contact Formation on 4H-SiC to Enhance Adhesion of Subsequent Backside Metallization (2024) Becker T, Hellinger C, Fuchs A, Körfer J, Rusch O Journal article Analytical Modelling of the Quasi-Static Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device (2024) Boettcher N, Rommel M, Erlbacher T Journal article Increasing 4H-SiC Trench Depth by Improving the Dry Etch Selectivity towards the Oxide Hard Mask (2024) Rusch O, Brueckner K, Erlbacher T Book chapter / Article in edited volumes Influence of the Size Distribution of the SiC Powder Source on the Shape of the Crystal Growth Interface during PVT Growth of 4H-SiC Boules (2024) Schultheiß J, Ihle J, Nanot SU, Bonanomi S, Munoz DC, Hammer R, Wellmann P Book chapter / Article in edited volumes In Situ Monitoring of the Ambient Gas Phase during PVT Growth of Nominally Undoped High Resistivity SiC Boules (2023) Ihle J, Wellmann P Book chapter / Article in edited volumes Transfer of Heteroepitaxial Grown 3C-SiC Layers for Application in Optical Frequency Combs (2023) Kollmuß M, Shi X, Ou H, Wellmann P Book chapter / Article in edited volumes Prevention of Bunched Basal Plane Dislocation Arrays in 4H-SiC PVT-Growth (2023) Steiner J, Nguyen BD, Sandfeld S, Wellmann P Book chapter / Article in edited volumes Investigation of the Nucleation Process During the Initial Stage of PVT Growth of 4H-SiC (2023) Strüber S, Arzig M, Steiner J, Salamon M, Uhlmann N, Wellmann P Book chapter / Article in edited volumes Chemical bonded oil-ptfe-pa66 composites as novel tribologically effective materials: Part 1 (2021) Nguyen TD, Gedan-Smolka M, Kamga LS, Sauer B, Emrich S, Kopnarski M, Voit B Conference contribution