Fundamental study of the temperature ramp-up influence for 3C-SiC hetero-epitaxy on silicon (100) (2010) Hens P, Wagner G, Hölzing A, Hock R, Wellmann P Journal article, Original article Quasi-freestanding Graphene on SiC(0001) (2010) Speck F, Ostler M, Röhrl J, Jobst J, Waldmann D, Hundhausen M, Ley L, et al. Journal article Strain and Charge in Epitaxial Graphene on Silicon Carbide Studied by Raman Spectroscopy (2010) Röhrl J, Hundhausen M, Speck F, Seyller T Journal article Observation of lattice plane bending during SiC PVT bulk growth using in-situ high energy x-ray diffraction (2010) Hock R, Konias K, Perdicaro LMS, Magerl A, Hens P, Wellmann P Journal article, Original article Role of boundaries in control of deformation rate and strength of crystalline materials (2009) Blum W Conference contribution Silicon carbide growth: C/Si ratio evaluation and modeling (2009) Pons M, Nishizawa SI, Wellmann P, Blanquet E, Chaussende D, Dedulle J, Madar R Journal article, Original article Role of boundaries in control of deformation rate and strength of crystalline materials (2009) Blum W Journal article Photoluminescence-topography of the p-type Doped SiC Wafers for Determination of Doping Inhomogeneity (2009) Oehlschläger F, Juillaguet S, Peyre H, Calmassel J, Wellmann P Journal article, Original article In-situ Observation of Polytype Switches During SiC PVT Bulk Growth by High Energy X-ray Diffraction (2009) Wellmann P, Konias K, Hens P, Hock R, Magerl A Journal article, Original article Germanium Incorporation during PVT Bulk Growth of Silicon Carbide (2009) Hens P, Künecke U, Konias K, Hock R, Wellmann P Journal article, Original article