Basal plane dislocation dynamics in highly p-type doped versus highly n-type doped SiC (2006) Wellmann P, Queren D, Müller R, Sakwe A, Künecke U Journal article, Original article In-situ observation of mass transfer in the CF-PVT growth process by X-ray imaging (2006) Chaussende D, Wellmann P, Ucar M, Pons M, Madar R Journal article, Original article Electronic Raman Studies of Shallow Donors in Silicon Carbide (2006) Püsche R, Hundhausen M, Ley L, Semmelroth K, Pensl G, Desperrier P, Wellmann P, et al. Journal article, Original article Nanometrology - Nanopositioning- and nanomeasuring machine with integrated nanoprobes (2006) Jäger G, Hausotte T, Manske E, Büchner HJ, Mastylo R, Vorbringer-Dorozhovets N, Füßl R, Grünwald R Conference contribution Modeling and experimental verification of SiC M-PVT bulk crystal growth (2006) Wellmann P, Müller R, Pons M Journal article, Original article Micro-optical characterization study of highly p-type doped SiC : Al wafers (2005) Wellmann P, Müller R, Pons M, Thuaire A, Crisci A, Mermoux M, Auvray L Journal article, Original article Progress and limits of the numerical simulation of SiC bulk and epitaxy growth processes (2005) Pons M, Blanquet E, Dedulle J, Ucar M, Wellmann P, Danielsson Ö, Ferret P, et al. Journal article, Original article Modified physical vapor transport growth of SiC - Control of gas phase composition for improved process conditions (2005) Wellmann P, Straubinger T, Desperrier P, Müller R, Künecke U, Sakwe A, Schmitt H, et al. Journal article, Original article Development of a KOH defect etching furnace with absolute in-situ temperature measurement capability (2005) Sakwe A, Herro ZG, Wellmann P Journal article, Original article Photoluminescence study of in-situ rare earth doped PVT-grown SiC single crystals (2005) Schmitt H, Müller R, Maier M, Winnacker A, Wellmann P Journal article, Original article