High Al-doping of SiC using a modified PVT (M-PVT) growth set-up (2005) Müller R, Künecke U, Weingärtner R, Schmitt H, Desperrier P, Wellmann P Journal article, Original article Annealing of Aluminium Implanted 4H-SiC: Comparison of Furnace and Lamp Annealing (2005) Rambach M, Bauer A, Frey L, Friedrichs P, Ryssel H Journal article [01-15] grown 6H SiC bulk crystals investigated by high energy triple axis x-ray diffraction (2005) Hock R Conference contribution On the origin of the below band-gap absorption bands in n-type (N) 4H-and 6H-SiC (2004) Weingärtner R, Wellmann P, Winnacker A Journal article, Original article Growth of 3C-SiC Bulk Material by the Modified Lely-Method (2004) Krieger M, Hundhausen M, Ley L Journal article Structural defects in SiC crystals investigated by high energy x-ray diffraction (2004) Weißer M, Seitz C, Wellmann P, Hock R, Magerl A Journal article, Original article Growth of phosphorous-doped n-type 6H-SiC crystals using a modified PVT technique and phosphine as source (2004) Desperrier P, Müller R, Winnacker A, Wellmann P Journal article, Original article Analysis of graphitization during physical vapor transport growth of silicon carbide (2004) Wellmann P, Herro ZG, Sakwe A, Masri P, Bogdanov M, Karpov S, Kulik A, et al. Journal article, Original article In-situ Er-doping of SiC bulk single crystals (2004) Müller R, Desperrier P, Seitz C, Weißer M, Magerl A, Maier M, Winnacker A, Wellmann P Journal article, Original article Study of the temperature induced polytype conversion in cubic SiC by Raman spectroscopy (2004) Hundhausen M, Ley L Journal article