Fabrication of broadband antireflective sub-wavelength structures on fluorescent SiC (2013) Ou Y, Jokubavicius V, Kaiser M, Wellmann P, Linnarsson MK, Yakimova R, Syväjärvi M, Ou H Journal article, Original article Modeling of the mass transport during the homo-epitaxial growth of silicon carbide by fast sublimation epitaxy (2013) Hupfer T, Hens P, Kaiser M, Jokubavicius V, Syväjärvi M, Wellmann P Journal article, Original article Photoluminescence topography of fluorescent SiC and its corresponding source crystals (2013) Wilhelm M, Kaiser M, Jokubavicius V, Syväjärvi M, Ou Y, Ou H, Wellmann P Journal article, Original article Application of 3-D X-ray computed tomography for the in-situ visualization of the SiC crystal growth interface during PVT bulk growth (2013) Neubauer G, Salamon M, Roider F, Uhlmann N, Wellmann P Journal article, Original article Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates (2013) Schimmel S, Kaiser M, Hens P, Jokubavicius V, Liljedahl R, Sun J, Yakimova R, et al. Journal article, Original article Polycrystalline SiC as source material for the growth of fluorescent SiC layers (2013) Kaiser M, Hupfer T, Jokubavicius V, Schimmel S, Syväjärvi M, Ou Y, Ou H, et al. Journal article, Original article Microsecond carrier lifetimes in bulk-like 3C-SiC grown by sublimation epitaxy (2013) Sun J, Kamiyama S, Wellmann P, Liljedahl R, Yakimova R, Syväjärvi M Journal article, Original article Lateral boron distribution in polycrystalline SiC source materials (2013) Linnarsson MK, Kaiser M, Liljedahl R, Jokubavicius V, Ou Y, Wellmann P, Ou H, Syväjärvi M Journal article, Original article Silicon nitride as top gate dielectric for epitaxial graphene (2013) Wehrfritz P, Fromm F, Malzer S, Seyller T Book chapter / Article in edited volumes Freestanding 3C-SiC grown by sublimation epitaxy using 3C-SiC templates on silicon (2012) Hens P, Müller J, Wagner G, Liljedahl R, Yakimova R, Spiecker E, Wellmann P, Syväjärvi M Journal article, Original article