Institut für Physik der Kondensierten Materie

Photoemission study of amorphous carbon modifications and comparison with calculated densities of states (1996) Ristein J, Ley L Journal article New-surface dopant passivation after wet-chemical preparation of Si (111):H surfaces (1996) Ley L, Ristein J Journal article Kinetics of field induced oxidation of hydrogen terminated Si(111) by means of a scanning force micoscope (1996) Ley L, Hundhausen M Journal article High field transport in the inversion layer of amorphous silicon thin film transistors (1996) Hundhausen M, Ley L Journal article Growth of diamond on silicon during the bias pretreatment in chemically vapour deposition of polycristalline diamond films (1996) Ristein J, Hundhausen M, Ley L Journal article [Added work of breathing, respiratory pattern and determination of ventilator weaning readiness in inspiratory pressure support and and automatic tube compensation] (1996) Stocker R, Fabry B Journal article The density of states of ta-C, ta-C:H and a-C:H as determined by x-ray excited photoelectron spectroscopy and molecular dynamics calculation (1996) Ristein J, Ley L Journal article Surface Fermi level position of hydrogen passivated Si (111) surfaces (1996) Ristein J, Ley L Journal article Nanometer-scale modification of the tribological properties of Si(111):H surfaces performed and investigated by a conducting-probe scanning force microscope (1996) Hundhausen M, Ley L Journal article Nanometer-scale field-induced oxidation if Si(111): H by a conducting-probe scanning force microscope: Doping dependence and kinetics (1995) Hundhausen M, Ley L Journal article