Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Light extraction from OLEDs for lighting applications through light scattering (2007) Bathelt R, Buchhauser D, Gärditz C, Paetzold R, Wellmann P Journal article Cathodoluminescence characterization of organic semiconductor materials for light emitting device applications (2007) Wellmann P, Karl U, Kleber S, Schmitt H Journal article Numerical modeling and experimental verification of modified-PVT crystal growth of SiC (2007) Wellmann P, Pons M Journal article Erratum to “Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC”: [J. Crystal Growth 289 (2006) 520–526] (2007) Sakwe A, Müller R, Wellmann P Journal article, Erratum Electronics Production: Research from Materials to Systems, Proceedings of the 2nd Chinese-German Summer School in Shanghai (2007) Wellmann P, Feng Z, Shi G Edited Volume Growth and characterization of C-13 enriched 4H-SiC for fundamental materials studies (2007) Jang YS, Sakwe A, Wellmann P, Juillaguet S, Peyre H, Camassel J, Steeds JW Journal article, Original article Defect etching of non-polar and semi-polar faces in SiC (2007) Sakwe A, Jang YS, Wellmann P Journal article, Original article Impact of n-type versus p-type doping on mechanical properties and dislocation evolution during SiC crystal growth (2007) Wellmann P, Hens P, Sakwe A, Queren D, Müller R, Durst K, Göken M Journal article, Original article Influence of growth temperature on the evolution of dislocations during PVT growth of bulk SiC single crystals (2007) Sakwe A, Wellmann P Journal article, Original article In-situ X-ray measurements of defect generation during PVT growth of SiC (2007) Konias K, Hock R, Stockmeier M, Wellmann P, Miller M, Ossege S, Magerl A Journal article, Original article