Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Vapor growth of SiC bulk crystals and its challenge of doping (2006) Wellmann P, Müller R, Queren D, Sakwe A, Pons M Journal article Silicon carbide CVD for electronic device applications (2006) Wellmann P, Pons M Journal article, Editorial Growth of silicon carbide bulk crystals with a modified physical vapor transport technique (2006) Müller R, Künecke U, Queren D, Sakwe A, Wellmann P Journal article Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping (2006) Künecke U, Wellmann P Journal article The influence of microstructure on the magnetic properties of WC/Co hardmetals (2006) Topic I, Sockel HG, Wellmann P, Göken M Journal article Special Issue on Silicon Carbid CVD for Electronic Device Applications (2006) Wellmann P, Pons M Edited Volume Embedded Systems and Materials – Research for Advanced Applications, Proceedings of the 1st Chinese-German Summer School in Shanghai (2006) Wellmann P, Shi G, Feng Z Edited Volume SiC epitaxial structure growth: evaluation and modeling (2006) Nishizawa SI, Wellmann P, Pons M Book chapter / Article in edited volumes Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC (2006) Sakwe A, Müller R, Wellmann P Journal article, Original article Silicon Carbide Growth: C/Si Ratio Evaluation and Modeling (2006) Pons M, Wellmann P, Nishizawa SI, Blanquet E, Dedulle J, Chaussende D Journal article, Original article