Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Quantitative determination of the doping level distribution in n-type GaAs using absorption mapping (2004) Wellmann P, Albrecht A, Künecke U, Birkmann B, Müller G, Jurisch M Journal article On the origin of the below band-gap absorption bands in n-type (N) 4H-and 6H-SiC (2004) Weingärtner R, Wellmann P, Winnacker A Journal article, Original article Structural defects in SiC crystals investigated by high energy x-ray diffraction (2004) Weißer M, Seitz C, Wellmann P, Hock R, Magerl A Journal article, Original article Growth of phosphorous-doped n-type 6H-SiC crystals using a modified PVT technique and phosphine as source (2004) Desperrier P, Müller R, Winnacker A, Wellmann P Journal article, Original article Analysis of graphitization during physical vapor transport growth of silicon carbide (2004) Wellmann P, Herro ZG, Sakwe A, Masri P, Bogdanov M, Karpov S, Kulik A, et al. Journal article, Original article In-situ Er-doping of SiC bulk single crystals (2004) Müller R, Desperrier P, Seitz C, Weißer M, Magerl A, Maier M, Winnacker A, Wellmann P Journal article, Original article Determination of exciton capture cross-sections of neutral nitrogen donor on cubic and hexagonal sites in n-type (N) 6H-SiC (2003) Weingärtner R, Albrecht A, Wellmann P, Winnacker A Journal article, Original article Determination of doping levels and their distribution in SiC by optical techniques (2003) Wellmann P, Weingärtner R Journal article, Original article Electrical and optical characterization of p-type boron-doped 6H-SiC bulk crystals (2003) Bickermann M, Weingärtner R, Herro ZG, Hofmann HD, Künecke U, Wellmann P, Winnacker A Journal article, Original article Impact of compensation on optical absorption bands in the below-bandgap region in n-type (N) 6H-SiC (2003) Weingärtner R, Bickermann M, Herro ZG, Künecke U, Sakwe A, Wellmann P, Winnacker A Journal article, Original article