Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Investigation of mass transport during PVT growth of SiC by 13C labeling of source material (2003) Herro ZG, Wellmann P, Püsche R, Hundhausen M, Ley L, Maier M, Masri P, Winnacker A Journal article, Original article Investigation of mass transport during SiCPVT growth using digital X-ray imaging, C-13 labeling of source material and numerical modeling (2003) Wellmann P, Herro ZG, Selder M, Durst F, Püsche R, Hundhausen M, Ley L, Winnacker A Journal article, Original article Optical quantitative determination of doping levels and their distribution in SiC (2002) Wellmann P, Weingärtner R, Bickermann M, Straubinger T, Winnacker A Journal article Aluminum p-type doping of silicon carbide crystals using a modified physical vapor transport growth method (2002) Straubinger T, Bickermann M, Weingärtner R, Wellmann P, Winnacker A Journal article 'In situ synthesis' of source material from elemental Si and C during SiCPVT growth process and characterization using digital X-ray imaging (2002) Wellmann P, Herro ZG, Straubinger T, Winnacker A Journal article, Original article Analysis of silicon incorporation into VGF-grown GaAs (2002) Birkmann B, Weingärtner R, Wellmann P, Wiedemann B, Müller G Journal article Aluminum doping of 6H-and 4H-SiC with a modified PVT growth method (2002) Straubinger T, Bickermann M, Rasp M, Weingärtner R, Wellmann P, Winnacker A Journal article, Original article Determination of charge carrier concentration in n- and p-doped SiC based on optical absorption measurements (2002) Weingärtner R, Wellmann P, Bickermann M, Hofmann HD, Straubinger T, Winnacker A Journal article On the preparation of semi-insulating SiC bulk crystals by the PVT technique (2001) Bickermann M, Hofmann HD, Straubinger T, Weingärtner R, Wellmann P, Winnacker A Journal article Impact of source material on silicon carbide vapor transport growth process (2001) Wellmann P, Hofmann HD, Kadinski L, Selder M, Straubinger T, Winnacker A Journal article