Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Evaluation of n-type doping of 4H-SiC and n-/p-type doping of 6H-SiC using absorption measurements (2001) Wellmann P, Bushevoy S, Weingärtner R Journal article Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiC (2001) Weingärtner R, Bickermann M, Bushevoy S, Hofmann HD, Rasp M, Straubinger T, Wellmann P, Winnacker A Journal article Impact of SiC source material on temperature field and vapor transport during SiC PVT crystal growth process (2001) Wellmann P, Hofmann HD, Kadinski L, Selder M, Straubinger T, Winnacker A Journal article, Original article Sublimations-Kristallzüchtung von Siliziumkarbid: Visualisierung und Modellbildung, Habilitationsschrift Universität Erlangen-Nürnberg (2001) Wellmann P Authored book SiC crystal growth from the vapor and liquid phase (2001) Hofmann HD, Bickermann M, Ebling D, Epelbaum B, Kadinski L, Selder M, Straubinger T, et al. Journal article, Original article Study of boron incorporation during PVT growth of p-type SiC crystals (2001) Bickermann M, Hofmann HD, Rasp M, Straubinger T, Weingärtner R, Wellmann P, Winnacker A Journal article, Original article Impact of SiC source material on temperature field and vapor transport during SiCPVT crystal growth process (2001) Wellmann P, Hofmann HD, Kadinski L, Selder M, Straubinger T, Winnacker A Journal article, Original article Absorption measurements and doping level evaluation in n-type and p-type 4H-SiC and 6H-SiC (2001) Weingärtner R, Bickermann M, Hofmann HD, Rasp M, Straubinger T, Wellmann P, Winnacker A Journal article, Original article Numerical simulation of thermal stress formation during PVT-growth of SiC bulk crystals (2001) Selder M, Kadinski L, Durst F, Straubinger T, Wellmann P, Hofmann HD Journal article, Original article Stability criteria for 4H-SiC bulk growth (2001) Straubinger T, Bickermann M, Hofmann HD, Weingärtner R, Wellmann P, Winnacker A Journal article, Original article