Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Three-dimensional in-situ growth surveillance of bulky SiC crystals (2019) Salamon M, Arzig M, Wellmann P, Uhlmann N Conference contribution, Original article Optimization of the SiC powder source size distribution for the sublimation growth of long crystals boules (2019) Steiner J, Arzig M, Hsiao TC, Wellmann P Journal article, Original article Deep electronic levels in n-type and p-type 3C-SiC (2019) Schöler M, Lederer M, Wellmann P Journal article, Original article Advances in In Situ SiC Growth Analysis Using Cone Beam Computed Tomography (2019) Salamon M, Arzig M, Uhlmann N, Wellmann P Journal article Growth of large-area, stress-free, and bulk-like 3C-SiC (100) using 3C-SiC-on-Si in vapor phase growth (2019) Schuh P, La Via F, Mauceri M, Zielinski M, Wellmann P Journal article Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC (2019) Steiner J, Roder M, Nguyen BD, Sandfeld S, Danilewsky A, Wellmann P Journal article Incorporation and control of defects with quantum functionality during sublimation growth of cubic silicon carbide (2019) Schöler M, Lederer M, Schuh P, Wellmann P Other publication type Silicon Carbide and Related Materials for Energy Saving Applications—Select Papers from E-MRS 2019—Symposium “Silicon Carbide and Related Materials for Energy Saving Applications" (2019) Wellmann P, La Via F, Jennings M Edited Volume Tracking of the growth interface during pvt-growth of SiC boules using a X-ray computed tomography setup (2019) Arzig M, Salamon M, Uhlmann N, Wellmann P Journal article, Original article An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications (2019) Lin L, Ou Y, Jokubavicius V, Syväjärvi M, Liang M, Liu Z, Yi X, et al. Journal article, Original article