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Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Friedrich-Alexander-Universität Erlangen-Nürnberg
Technische Fakultät
Department Werkstoffwissenschaften
Institute Materials for Electronics and Energy Technology (i-MEET)
Overview
Publications
(287)
Research Grants
(11)
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Journal article
Journal article
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Book chapter / Article in edited volumes
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Vacuum-Free and Highly Dense Nanoparticle Based Low-Band-Gap CuInSe2 Thin-Films Manufactured by Face-to-Face Annealing with Application of Uniaxial Mechanical Pressure (2019)
Schuster M, Stapf D, Osterrieder T, Barthel V, Wellmann P
Journal article, Original article
Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks (2019)
Schuh P, Steiner J, La Via F, Mauceri M, Zielinski M, Wellmann P
Journal article, Original article
Modeling of the PVT Growth Process of Bulk 3C-SiC - Growth Process Development and Challenge of the Right Materials Data Base (2019)
Schöler M, Schuh P, Steiner J, Wellmann P
Journal article, Original article
Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates (2019)
Schuh P, Künecke U, Litrico G, Mauceri M, La Via F, Monnoye S, Zielinski M, Wellmann P
Journal article, Original article
Three-dimensional in-situ growth surveillance of bulky SiC crystals (2019)
Salamon M, Arzig M, Wellmann P, Uhlmann N
Conference contribution, Original article
Optimization of the SiC powder source size distribution for the sublimation growth of long crystals boules (2019)
Steiner J, Arzig M, Hsiao TC, Wellmann P
Journal article, Original article
Deep electronic levels in n-type and p-type 3C-SiC (2019)
Schöler M, Lederer M, Wellmann P
Journal article, Original article
Advances in In Situ SiC Growth Analysis Using Cone Beam Computed Tomography (2019)
Salamon M, Arzig M, Uhlmann N, Wellmann P
Journal article
Growth of large-area, stress-free, and bulk-like 3C-SiC (100) using 3C-SiC-on-Si in vapor phase growth (2019)
Schuh P, La Via F, Mauceri M, Zielinski M, Wellmann P
Journal article
Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC (2019)
Steiner J, Roder M, Nguyen BD, Sandfeld S, Danilewsky A, Wellmann P
Journal article
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