Lehrstuhl für Elektronische Bauelemente

Tetramethoxysilane as a precursor for focused ion beam and electron beam assisted insulator (SiOx) deposition (1996) Lipp S, Frey L, Lehrer C, Frank B, Demm E, Pauthner S, Ryssel H Journal article, Original article Reduction of lateral parasitic current flow by buried recombination layers formed by high energy implantation of C or O into silicon (1996) Bogen S, Herden M, Frey L, Ryssel H Conference contribution, Conference Contribution Investigations on the topology of structures milled and etched by focused ion beams (1996) Lipp S, Frey L, Lehrer C, Frank B, Demm E, Ryssel H Journal article, Original article Deep implants for semiconductor device applications (1996) Frey L, Bogen S, Herden M, Ryssel H Journal article, Original article A multi-laminate wire mesh ionizer for a Cs sputter negative ion source (1996) Jiao G, Bogen S, Frey L, Ryssel H Journal article, Original article A comparison of focused ion beam and electron beam induced deposition processes (1996) Lipp S, Frey L, Lehrer C, Demm E, Pauthner S, Ryssel H Journal article, Original article Model for the electronic stopping of channeled ions in silicon around the stopping power maximum (1995) Frey L, Ryssel H, Bogen S, Hobler G, Simionescu A Journal article, Original article Local material removal by focused ion beam milling and etching (1995) Lipp S, Frey L, Franz G, Demm E, Petersen S, Ryssel H Journal article, Original article Improved delineation technique for two dimensional dopant profiling (1995) Gong L, Petersen S, Frey L, Ryssel H Journal article, Original article Comparison of retrograde and conventional p-wells in regard of latch-up susceptibility (1995) Bogen S, Körber K, Gong L, Frey L, Ryssel H Journal article, Original article