Institute Materials for Electronics and Energy Technology (i-MEET) (i-MEET)

Aluminum p-type doping of silicon carbide crystals using a modified physical vapor transport growth method (2002) Straubinger T, Bickermann M, Weingärtner R, Wellmann P, Winnacker A Journal article 'In situ synthesis' of source material from elemental Si and C during SiCPVT growth process and characterization using digital X-ray imaging (2002) Wellmann P, Herro ZG, Straubinger T, Winnacker A Journal article, Original article Analysis of silicon incorporation into VGF-grown GaAs (2002) Birkmann B, Weingärtner R, Wellmann P, Wiedemann B, Müller G Journal article Aluminum doping of 6H-and 4H-SiC with a modified PVT growth method (2002) Straubinger T, Bickermann M, Rasp M, Weingärtner R, Wellmann P, Winnacker A Journal article, Original article Determination of charge carrier concentration in n- and p-doped SiC based on optical absorption measurements (2002) Weingärtner R, Wellmann P, Bickermann M, Hofmann HD, Straubinger T, Winnacker A Journal article A two-scale method for the computation of solid-liquid phase transitions with dendritic microstructure (2002) Eck C, Knabner P, Korotov S Journal article, Original article A low-bandgap semiconducting polymer for photovoltaic devices and infrared emitting diodes (2002) Brabec C, Winder C, Sariciftci NS, Hummelen J, Dhanabalan A, van Hal P, Janssen RAJ Journal article, Original article A comparison between state-of-the-art 'gilch' and 'sulphinyl' synthesised MDMO-PPV/PCBM bulk hetero-junction solar cells (2002) Munters T, Martens T, Goris L, Vrindts V, Manca J, Lutsen L, De Ceuninck W, et al. Journal article, Original article On the preparation of semi-insulating SiC bulk crystals by the PVT technique (2001) Bickermann M, Hofmann HD, Straubinger T, Weingärtner R, Wellmann P, Winnacker A Journal article Impact of source material on silicon carbide vapor transport growth process (2001) Wellmann P, Hofmann HD, Kadinski L, Selder M, Straubinger T, Winnacker A Journal article