NOVASiC

Industry / private company


Location: Le Bourget du Lac

ISNI: -

ROR: https://ror.org/016r60a96

Show on Map:

close-button

Types of publications

Journal article
Book chapter / Article in edited volumes
Authored book
Translation
Thesis
Edited Volume
Conference contribution
Other publication type
Unpublished / Preprint

Publication year

From
To

Abstract

Journal

New approaches and understandings in the growth of cubic silicon carbide (2021) Via FL, Zimbone M, Bongiorno C, La Magna A, Fisicaro G, Deretzis I, Scuderi V, et al. Journal article Prospects of bulk growth of 3C-SiC using sublimation growth (2020) Wellmann P, Schuh P, Kollmuß M, Schöler M, Steiner J, Zielinski M, Mauceri M, La Via F Journal article Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks (2019) Schuh P, Steiner J, La Via F, Mauceri M, Zielinski M, Wellmann P Journal article, Original article Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates (2019) Schuh P, Künecke U, Litrico G, Mauceri M, La Via F, Monnoye S, Zielinski M, Wellmann P Journal article, Original article Growth of large-area, stress-free, and bulk-like 3C-SiC (100) using 3C-SiC-on-Si in vapor phase growth (2019) Schuh P, La Via F, Mauceri M, Zielinski M, Wellmann P Journal article Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition (2016) Sledziewski T, Vivona M, Alassaad K, Kwasnicki P, Arvinte R, Beljakowa S, Weber HB, et al. Journal article, Letter Characterization of Ge-doped homoepitaxial layers grown by chemical vapor deposition (2014) Sledziewski T, Beljakowa S, Alassaad K, Kwasnicki P, Arvinte R, Juillaguet S, Zielinski M, et al. Journal article, Original article