Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light

Research facility


Location: Erlangen, Germany (DE) DE

ISNI: 0000000403744283

ROR: https://ror.org/020as7681

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Types of publications

Journal article
Book chapter / Article in edited volumes
Authored book
Translation
Thesis
Edited Volume
Conference contribution
Other publication type
Unpublished / Preprint

Publication year

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To

Abstract

Journal

Microconstriction Arrays for High-Throughput Quantitative Measurements of Cell Mechanical Properties (2015) Lange J, Steinwachs J, Kolb T, Lautscham L, Harder I, Whyte G, Fabry B Journal article Optical nano-structuring in light-sensitive AgCl- Ag waveguide thin films: Wavelength effect (2014) Talebi R, Nahal A, Bashouti MY, Christiansen SH Journal article Identifying modes of large whispering-gallery mode resonators from the spectrum and emission pattern (2014) Schunk G, Fuerst JU, Foertsch M, Strekalov DV, Vogl U, Sedlmeir F, Schwefel HGL, et al. Journal article Trojan-horse attacks threaten the security of practical quantum cryptography (2014) Jain N, Anisimova E, Khan I, Makarov V, Marquardt C, Leuchs G Journal article Atomic mercury vapor inside a hollow-core photonic crystal fiber (2014) Vogl U, Peuntinger C, Joly NY, Russell PSJ, Marquardt C, Leuchs G Journal article M-ary phase shift keying receiver beating the standard quantum limit for any signal power (2014) Müller CR, Leven A, Bülow H, Schmalen L, Leuchs G, Marquardt C Conference contribution Atmospheric continuous-variable quantum communication (2014) Heim B, Peuntinger C, Killoran N, Khan I, Wittmann C, Marquardt C, Leuchs G Journal article Study of iron-catalysed growth of β-Ga2O3nanowires and their detailed characterization using TEM, Raman and cathodoluminescence techniques (2014) Kumar S, Sarau G, Tessarek C, Bashouti MY, Haehnel A, Christiansen S, Singh R Journal article Practical limits of an optimized quantum receiver (2014) Marquardt C, Müller CR, Leuchs G Conference contribution Optical properties of vertical, tilted and in-plane GaN nanowires on different crystallographic orientations of sapphire (2014) Tessarek C, Figge S, Gust A, Heilmann M, Dieker C, Spiecker E, Christiansen S Journal article