Universität Stuttgart

Back-end-of-line CMOS-compatible diode fabrication with pure boron deposition down to 50 °C (2019) Knežević T, Suligoj T, Liu X, Nanver LK, Elsayed A, Dick JF, Schulze J Conference contribution Continuous-Time Random Walk for a Particle in a Periodic Potential (2019) Dechant A, Kindermann F, Widera A, Lutz E Journal article Harnessing billions of tasks for a scalable portable hydrodynamic simulation of the merger of two stars (2019) Heller T, Lelbach BA, Huck KA, Biddiscombe J, Grubel P, Koniges AE, Kretz M, et al. Journal article PrxCa1-xMnO3-Based Memory and Si Time-Keeping Selector for Area and Energy Efficient Synapse (2019) Das B, Lele A, Kumbhare P, Schulze J, Ganguly U Journal article Electrical characterization of fabricated PIN diodes made from SixGe1-x-ysny with an embedded Ge1-xSnx quantum well (2019) Povolni P, Schwarz D, Clausen CJ, Elogail Y, Funk HS, Oehme M, Weißhaupt D, Schulze J Conference contribution Electrical characterization of low-temperature boron on silicon deposition utilizing molecular beam epitaxy (2019) Dick JF, Elsayed A, Schwarz D, Schulze J Conference contribution Fabrication of GepB-alloys by means of pulsed laser induced epitaxy (2019) Weiser MC, Schwarz D, Funk HS, Weißhaupt D, Serra C, Schulze J, Chiussi S Conference contribution Electrical Characterization of pure Boron-on-Germanium pin Diodes (2019) Gebert L, Schwarz D, Elsayed A, Schulze J Conference contribution A Monolithically Integrated 80-GHz Full-Wave Rectenna With Silicon Schottky Diodes Under MOTT Operation (2019) Zhang W, Kasper E, Schulze J Conference contribution Insulated Gate Bipolar Transistors based on Pure Boron Collectors (2019) Elsayed A, Dick JF, Schulze J Conference contribution