Universität Stuttgart

(Si)GeSn plasmonics (2017) Fischer IA, Augel L, Berrier A, Oehme M, Schulze J Conference contribution A monolithically integrated, optically clocked 10 GS/s sampler with a bandwidth of >30 GHz and a jitter of <30 fs in photonic SiGe BiCMOS technology (2017) Krueger B, Makon RE, Landolt O, Hidri O, Schweiger T, Krune E, Knoll D, et al. Conference contribution Impact of Sn segregation on Ge1-xSnx epi-layers growth by RP-CVD (2017) Weisshaupt D, Jahandar P, Colston G, Allred P, Schulze J, Myronov M Conference contribution Growth of patterned GeSn and GePb alloys by pulsed laser induced epitaxy (2017) Schlipf J, Frieiro JL, Fischer IA, Serra C, Schulze J, Chiussi S Conference contribution Local growth of graphene on Cu and Cu0.88Ni0.12 foil substrates (2017) Funk HS, Ng J, Kamimura N, Xie YH, Schulze J Conference contribution Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges (2017) Rolseth EG, Blech A, Fischer IA, Hashad Y, Koerner R, Kostecki K, Kruglov A, et al. Conference contribution Features of polarized Raman spectra for homogeneous and non-homogeneous compressively strained Ge1−ySny alloys (2017) Perova TS, Kasper E, Oehme M, Cherevkov S, Schulze J Journal article Die neue VDI-Richtlinie 5610 Blatt 2 „Wissensbasierte Konstruktion“ (2017) Luft T, Roth D, Wartzack S, Binz H Conference contribution, Conference Contribution Fabrication and simulation of vertical Ge-based P-channel planar-doped barrier FETs with 40 nm channel length (2017) Elogail Y, Elkhouly K, Fischer I, Kostecki K, Schulze J Conference contribution Tailoring the structure and thermoelectric properties of BaTiO3 via Eu2+ substitution (2017) Xiao X, Widenmeyer M, Xie W, Zou T, Yoon S, Scavini M, Checchia S, et al. Journal article