Institut National Polytechnique de Grenoble - Grenoble Institute of Technology

University / College


Location: Grenoble, France (FR) FR

ISNI: 0000000417654326

ROR: https://ror.org/05sbt2524

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Types of publications

Journal article
Book chapter / Article in edited volumes
Authored book
Translation
Thesis
Edited Volume
Conference contribution
Other publication type
Unpublished / Preprint

Publication year

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Abstract

Journal

Silicon Carbide Growth: C/Si Ratio Evaluation and Modeling (2006) Pons M, Wellmann P, Nishizawa SI, Blanquet E, Dedulle J, Chaussende D Journal article, Original article Investigation of the charge carrier concentration in highly aluminum doped SiC using Raman scattering (2006) Müller R, Künecke U, Thuaire A, Mermoux M, Pons M, Wellmann P Journal article In-situ observation of mass transfer in the CF-PVT growth process by X-ray imaging (2006) Chaussende D, Wellmann P, Ucar M, Pons M, Madar R Journal article, Original article Modeling and experimental verification of SiC M-PVT bulk crystal growth (2006) Wellmann P, Müller R, Pons M Journal article, Original article Optical mapping of aluminum doped p-type SiC wafers (2005) Wellmann P, Straubinger T, Künecke U, Müller R, Sakwe A, Pons M, Thuaire A, et al. Journal article SiC single crystal growth by a modified physical vapor transport technique (2005) Wellmann P, Desperrier P, Müller R, Straubinger T, Winnacker A, Baillet F, Blanquet E, et al. Journal article Numerical simulation of SIC processes: A characterization tool for the design of epitaxial structures in electronics (2005) Pons M, Nishizawa SI, Wellmann P, Ucar M, Blanquet E, Dedulle J, Baillet F, et al. Journal article, Original article Micro-optical characterization study of highly p-type doped SiC : Al wafers (2005) Wellmann P, Müller R, Pons M, Thuaire A, Crisci A, Mermoux M, Auvray L Journal article, Original article Progress and limits of the numerical simulation of SiC bulk and epitaxy growth processes (2005) Pons M, Blanquet E, Dedulle J, Ucar M, Wellmann P, Danielsson Ö, Ferret P, et al. Journal article, Original article Modified physical vapor transport growth of SiC - Control of gas phase composition for improved process conditions (2005) Wellmann P, Straubinger T, Desperrier P, Müller R, Künecke U, Sakwe A, Schmitt H, et al. Journal article, Original article