Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)
Research facility
Location:
Erlangen,
Germany (DE)
ISNI: 0000000104810543
ROR: https://ror.org/04q5rka56
Determination of compensation ratios of al-implanted 4H-SIC by tcad modelling of TLM measurements (2019)
Kocher M, Yao B, Weiße J, Rommel M, Xu ZW, Erlbacher T, Bauer A
Conference contribution
Comparison between NI-SALICIDE and self-aligned lift-off used in fabrication of ohmic contacts for sic power MOSFET (2019)
Śledziewski T, Erlbacher T, Bauer A, Frey L, Chen X, Zhao Y, Li C, Dai X
Conference contribution
On the origin of charge compensation in aluminum-implanted n-type 4H-SiC by analysis of hall effect measurements (2019)
Weiße J, Hauck M, Sledziewski T, Krieger M, Bauer A, Mitlehner H, Frey L, Erlbacher T
Conference contribution
Design considerations for robust manufacturing and high yield of 1.2 kv 4H-SIC VDMOS transistors (2019)
Schlichting H, Sledziewski T, Bauer AJ, Erlbacher T
Conference contribution
Influence of trench design on the electrical properties of 650v 4H-SIC JBS diodes (2019)
Rusch O, Moult J, Erlbacher T
Conference contribution
Design of a 4H-SIC resurf N-LDMOS transistor for high voltage integrated circuits (2019)
Weiße J, Mitlehner H, Frey L, Erlbacher T
Conference contribution
Tracking of the growth interface during pvt-growth of SiC boules using a X-ray computed tomography setup (2019)
Arzig M, Salamon M, Uhlmann N, Wellmann P
Journal article, Original article
Channeling in 4H-SiC from an application point of view (2019)
Pichler P, Sledziewski T, Häublein V, Bauer AJ, Erlbacher T
Conference contribution
Attenuated phase shift mask for extreme ultraviolet: Can they mitigate three-dimensional mask effects? (2019)
Erdmann A, Evanschitzky P, Mesilhy HMS, Philipsen V, Hendrickx E, Bauer M
Journal article
Innovative Technologien für intelligente dezentrale Energiesysteme (2019)
März M, Oechsner R
Authored book, Manual