Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)
Research facility
Location:
Erlangen,
Germany (DE)
ISNI: 0000000104810543
ROR: https://ror.org/04q5rka56
Turn-Off Oscillation Analysis of Parallel-Connected GaN Transistors (2026)
Hönschel JV, Schwanninger R, März M
Journal article
High-Temperature H2- and N2- Containing Surface Conditioning for SiO2/4H-SiC Interface Optimization (2026)
Ziegler J, Scholten D, Bartolf H, Schulze J
Book chapter / Article in edited volumes
Influence of Different Contact Lengths on the Correct Extraction of the Resistance Parameters of TLM Test Structures on 4H-SiC (2026)
Ley M, Kauth J, Rommel M, Fischer B, May A, Schulze J
Book chapter / Article in edited volumes
4H-SiC Tunneling Light Emitter as a Light-Source for Quantum Applications (2026)
Dick J, Ultsch S, Rommel M, Schulze J
Journal article
A Simulation Study of Electronic Device Designs for the Control of SiC Color Centers as Spin Qubits (2026)
Magerl F, Pixius C, Förthner J, Berwian P, Bär E, Schulze J
Journal article
The Tunneling Field-Effect Transistor as Novel Device Concept for High-Frequency Hard-Switching Power Electronics (2026)
Dick J, Schwarberg J, Rommel M, Schulze J
Journal article
Voltage Balancing Control of Input Capacitors in a Three-Level Buck/Boost Converter (2026)
Bosch M, Schwanninger R, März M
Conference contribution
200 MHz PCB Rogowski Coil Current Sensor for WBG Switching Applications (2026)
Sax J, Quergfelder S, Heckel T, Eckardt B, März M
Conference contribution
Demonstration of a fully vertical hole-injected 4H-SiC-SACM-Avalanche-Photodiode with two serial pn-junctions (2026)
Beier F, Papathanasiou N, Kallinger B, Rommel M, Schulze J
Journal article
Cross-sectional Nanoindentation for Characterizing Adhesion Strength of Metallic Thin Films (2025)
Zhao D
Thesis