AIXTRON SE

Industry / private company


Location: Herzogenrath, Germany (DE) DE

ISNI: 000000040463924X

ROR: https://ror.org/02adgag39

close-button

Types of publications

Journal article
Book chapter / Article in edited volumes
Authored book
Translation
Thesis
Edited Volume
Conference contribution
Other publication type
Unpublished / Preprint

Publication year

From
To

Abstract

Journal

Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures (2020) Besendörfer S, Meißner E, Zweipfennig T, Yacoub H, Fahle D, Behmenburg H, Kalisch H, et al. Journal article