PD Dr. Tobias Erlbacher

Lehrstuhl für Elektronische Bauelemente Technische Fakultät

An Iterative Surface Potential Algorithm Including Interface Traps for Compact Modeling of SiC-MOSFETs (2020) Albrecht M, Klüpfel F, Erlbacher T Journal article A 4H-SiC UV Phototransistor with Excellent Optical Gain Based on Controlled Potential Barrier (2020) Di Benedetto L, Licciardo GD, Erlbacher T, Bauer AJ, Rubino A Journal article On a Novel Source Technology for Deep Aluminum Diffusion for Silicon Power Electronics (2019) Rattmann G, Pichler P, Erlbacher T Journal article Deeper insight into lifetime-engineering in 4H-SiC by ion implantation (2019) Erlekampf J, Kallinger B, Weiße J, Rommel M, Berwian P, Friedrich J, Erlbacher T Journal article Design Considerations for Robust Manufacturing and High Yield of 1.2 kV 4H-SiC VDMOS Transistors (2019) Schlichting H, Sledziewski T, Bauer A, Erlbacher T Journal article Feasibility of 4H-SiC p-i-n Diode for Sensitive Temperature Measurements Between 20.5 K and 802 K (2019) Matthus CD, Di Benedetto L, Kocher M, Bauer AJ, Licciardo GD, Rubino A, Erlbacher T Journal article Silicon RC-Snubber for 900 V Applications Utilising non-Stoichiometric Silicon Nitride (2019) Boettcher N, Heckel T, Erlbacher T, Pelaic K Conference contribution Performance of 4H-SIC bipolar diodes as temperature sensor at low temperatures (2019) Di Benedetto L, Matthus C, Erlbacher T, Bauer AJ, Licciardo GD, Rubino A, Frey L Conference contribution Determination of compensation ratios of al-implanted 4H-SIC by tcad modelling of TLM measurements (2019) Kocher M, Yao B, Weiße J, Rommel M, Xu ZW, Erlbacher T, Bauer A Conference contribution Comparison between NI-SALICIDE and self-aligned lift-off used in fabrication of ohmic contacts for sic power MOSFET (2019) Śledziewski T, Erlbacher T, Bauer A, Frey L, Chen X, Zhao Y, Li C, Dai X Conference contribution