PD Dr. Tobias Erlbacher

Lehrstuhl für Elektronische Bauelemente Technische Fakultät

On the origin of charge compensation in aluminum-implanted n-type 4H-SiC by analysis of hall effect measurements (2019) Weiße J, Hauck M, Sledziewski T, Krieger M, Bauer A, Mitlehner H, Frey L, Erlbacher T Conference contribution Design considerations for robust manufacturing and high yield of 1.2 kv 4H-SIC VDMOS transistors (2019) Schlichting H, Sledziewski T, Bauer AJ, Erlbacher T Conference contribution Influence of trench design on the electrical properties of 650v 4H-SIC JBS diodes (2019) Rusch O, Moult J, Erlbacher T Conference contribution Design of a 4H-SIC resurf N-LDMOS transistor for high voltage integrated circuits (2019) Weiße J, Mitlehner H, Frey L, Erlbacher T Conference contribution Channeling in 4H-SiC from an application point of view (2019) Pichler P, Sledziewski T, Häublein V, Bauer AJ, Erlbacher T Conference contribution Retrofitting Wide Band Gap Devices to classic Power Modules using Silicon RC Snubbers (2019) Matlok S, Boettcher N, Jahn M, Hörauf P, Erlbacher T, Eckardt B Conference contribution, Conference Contribution Wavelength-selective 4H-SiC UV-sensor array (2019) Matthus CD, Bauer AJ, Frey L, Erlbacher T Journal article, Original article Heterogeneous Integration of Vertical GaN Power Transistor on Si Capacitor for DC-DC Converters (2018) Yu Z, Zeltner S, Boettcher N, Rattmann G, Leib J, Bayer C, Schletz A, et al. Conference contribution, Conference Contribution Implementation of 4H-SiC PiN-diodes as nearly linear temperature sensors up to 800 K towards SiC multi-sensor integration (2017) Matthus C, Erlbacher T, Schöfer B, Bauer A, Frey L Journal article, Original article Optimization of 4H-SiC photodiodes as selective UV sensors (2017) Matthus C, Burenkov A, Erlbacher T Journal article, Original article