Philipp Schuh

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Institute Materials for Electronics and Energy Technology (i-MEET) (i-MEET) Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Publications

(18)

An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications (2019) Lin L, Ou Y, Jokubavicius V, Syväjärvi M, Liang M, Liu Z, Yi X, et al. Journal article, Original article From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction (2018) La Via F, Severino A, Anzalone R, Bongiorno C, Litrico G, Mauceri M, Schöler M, et al. Journal article, Original article Characterization of protrusions and stacking faults in 3C-SiC grown by sublimation epitaxy using 3C-SiC-on-Si seeding layers (2017) Schöler M, Schuh P, Litrico G, La Via F, Mauceri M, Wellmann P Journal article, Original article Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers (2017) Schuh P, Schöler M, Wilhelm M, Syväjärvi M, Litrico G, La Via F, Mauceri M, Wellmann P Journal article, Original article 3C-sic bulk sublimation growth on CVD hetero-epitaxial seeding layers (2017) Schuh P, Litrico G, La Via F, Mauceri M, Wellmann P Journal article, Original article Growing bulk-like 3C-SiC from seeding material produced by CVD (2017) Schuh P, Arzig M, Litrico G, La Via F, Mauceri M, Wellmann P Journal article, Original article Physical vapor growth of double position boundary free, quasi-bulk 3C-SiC on high quality 3C-SiC on Si CVD templates (2016) Schuh P, Vecera P, Hirsch A, Syväjärvi M, Litrico G, La Via F, Mauceri M, Wellmann P Journal article, Original article Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates (2015) Jokubavicius V, Yazdi GR, Liljedahl R, Ivanov IG, Sun J, Liu X, Schuh P, et al. Journal article

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