Prof. Dr. Lothar Frey

Lehrstuhl für Elektronische Bauelemente

Measurement of shallow arsenic impurity profiles in semiconductor silicon using time-of-flight secondary ion mass spectrometry and total reflection X-ray fluorescence spectrometry (1997) Schwenke H, Knoth J, Fabry L, Pahlke S, Scholz R, Frey L Journal article, Original article In-depth damage distribution by scanning probe methods in targets irradiated with 200 MeV ions (1997) Biró L, Gyulai J, Havancsák K, Didyk A, Frey L, Ryssel H Journal article, Original article Distortion of sims profiles due to ion beam mixing (1997) Saggio M, Montandon C, Bourenkov A, Frey L, Pichler P Journal article, Original article Tetramethoxysilane as a precursor for focused ion beam and electron beam assisted insulator (SiOx) deposition (1996) Lipp S, Frey L, Lehrer C, Frank B, Demm E, Pauthner S, Ryssel H Journal article, Original article Reduction of lateral parasitic current flow by buried recombination layers formed by high energy implantation of C or O into silicon (1996) Bogen S, Herden M, Frey L, Ryssel H Conference contribution, Conference Contribution Investigations on the topology of structures milled and etched by focused ion beams (1996) Lipp S, Frey L, Lehrer C, Frank B, Demm E, Ryssel H Journal article, Original article Deep implants for semiconductor device applications (1996) Frey L, Bogen S, Herden M, Ryssel H Journal article, Original article A multi-laminate wire mesh ionizer for a Cs sputter negative ion source (1996) Jiao G, Bogen S, Frey L, Ryssel H Journal article, Original article A comparison of focused ion beam and electron beam induced deposition processes (1996) Lipp S, Frey L, Lehrer C, Demm E, Pauthner S, Ryssel H Journal article, Original article Model for the electronic stopping of channeled ions in silicon around the stopping power maximum (1995) Frey L, Ryssel H, Bogen S, Hobler G, Simionescu A Journal article, Original article