Prof. Dr. Lothar Frey

Lehrstuhl für Elektronische Bauelemente

Local material removal by focused ion beam milling and etching (1995) Lipp S, Frey L, Franz G, Demm E, Petersen S, Ryssel H Journal article, Original article Improved delineation technique for two dimensional dopant profiling (1995) Gong L, Petersen S, Frey L, Ryssel H Journal article, Original article Comparison of retrograde and conventional p-wells in regard of latch-up susceptibility (1995) Bogen S, Körber K, Gong L, Frey L, Ryssel H Journal article, Original article Investigation of the effect of altered defect structure produced by photon assisted implantation on the diffusion of As in silicon during thermal annealing (1994) Biró L, Gyulai J, Bogen S, Frey L, Ryssel H Journal article, Original article Practical aspects of ion beam analysis of semiconductor structures (1994) Frey L, Pichler P, Kasko I, Thies I, Lipp S, Streckfuss N, Gong L, Ryssel H Journal article, Original article Athermal effects in ion implanted layers (1994) Gyulai J, Ryssel H, Biró L, Frey L, Kuki A, Kormány T, Serfozo G, Khanh N Journal article, Original article Analytical description of high energy implantation profiles of boron and phosphorus into crystalline silicon (1994) Gong L, Bogen S, Frey L, Jung W, Ryssel H Journal article, Original article Photon assisted implantation (PAI) (1993) Biró L, Gyulai J, Ryssel H, Frey L, Kormány T, Tuan N, Horváth z Journal article, Original article High energy implantation of 10B and 11B into (100) silicon in channel and in random direction (1993) Bogen S, Gong L, Frey L, Ryssel H Journal article, Original article Effect of ion-beam mixing temperature on cobalt silicide formation (1993) Kasko I, Dehm C, Frey L, Ryssel H Journal article, Original article