Prof. Dr.-Ing. Peter Wellmann

Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

On the lattice parameters of silicon carbide (2009) Stockmeier M, Müller R, Sakwe A, Wellmann P, Magerl A Journal article Advanced Electronics – Materials, Devices and System Applications (with Special Topic on Disperse Systems for Printable Electronics), Proceedings of the 3rd Chinese-German Summer School in Erlangen (2009) Wellmann P, Feng Z, Shi G Edited Volume Silicon carbide growth: C/Si ratio evaluation and modeling (2009) Pons M, Nishizawa SI, Wellmann P, Blanquet E, Chaussende D, Dedulle J, Madar R Journal article, Original article Photoluminescence-topography of the p-type Doped SiC Wafers for Determination of Doping Inhomogeneity (2009) Oehlschläger F, Juillaguet S, Peyre H, Calmassel J, Wellmann P Journal article, Original article In-situ Observation of Polytype Switches During SiC PVT Bulk Growth by High Energy X-ray Diffraction (2009) Wellmann P, Konias K, Hens P, Hock R, Magerl A Journal article, Original article Germanium Incorporation during PVT Bulk Growth of Silicon Carbide (2009) Hens P, Künecke U, Konias K, Hock R, Wellmann P Journal article, Original article P- and n-type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates (2009) Hens P, Syvaejaervi M, Oehlschläger F, Wellmann P, Yakimova R Journal article, Original article Thermal Expansion Coefficients of 6H Silicon Carbide (2009) Stockmeier M, Sakwe A, Hens P, Wellmann P, Hock R, Magerl A Journal article, Original article Aluminum p-type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum (2009) Hens P, Künecke U, Wellmann P Journal article, Original article Application of optical absorbance for the investigation of electronic and structural properties of sol-gel processed TiO2 films (2008) Welte A, Waldauf C, Brabec CJ, Wellmann P Journal article