Prof. Dr.-Ing. Peter Wellmann

Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Optical quantitative determination of doping levels and their distribution in SiC (2002) Wellmann P, Weingärtner R, Bickermann M, Straubinger T, Winnacker A Journal article Aluminum p-type doping of silicon carbide crystals using a modified physical vapor transport growth method (2002) Straubinger T, Bickermann M, Weingärtner R, Wellmann P, Winnacker A Journal article 'In situ synthesis' of source material from elemental Si and C during SiCPVT growth process and characterization using digital X-ray imaging (2002) Wellmann P, Herro ZG, Straubinger T, Winnacker A Journal article, Original article Analysis of silicon incorporation into VGF-grown GaAs (2002) Birkmann B, Weingärtner R, Wellmann P, Wiedemann B, Müller G Journal article Aluminum doping of 6H-and 4H-SiC with a modified PVT growth method (2002) Straubinger T, Bickermann M, Rasp M, Weingärtner R, Wellmann P, Winnacker A Journal article, Original article Determination of charge carrier concentration in n- and p-doped SiC based on optical absorption measurements (2002) Weingärtner R, Wellmann P, Bickermann M, Hofmann HD, Straubinger T, Winnacker A Journal article On the preparation of semi-insulating SiC bulk crystals by the PVT technique (2001) Bickermann M, Hofmann HD, Straubinger T, Weingärtner R, Wellmann P, Winnacker A Journal article Impact of source material on silicon carbide vapor transport growth process (2001) Wellmann P, Hofmann HD, Kadinski L, Selder M, Straubinger T, Winnacker A Journal article Evaluation of n-type doping of 4H-SiC and n-/p-type doping of 6H-SiC using absorption measurements (2001) Wellmann P, Bushevoy S, Weingärtner R Journal article Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiC (2001) Weingärtner R, Bickermann M, Bushevoy S, Hofmann HD, Rasp M, Straubinger T, Wellmann P, Winnacker A Journal article