Dr. Michael Krieger

Chair of Applied Physics (LAP)

Früh zur Datenkompetenz (2022) Krieger M, Weber HB, van Eldik C Journal article, Report Impact of Epitaxial Defects on Device Behavior and their Correlation to the Reverse Characteristics of SiC Devices (2022) Kodolitsch E, Sodan V, Krieger M, Tsavdaris N Journal article Measurement of the PtH defect depth profiles in fully processed silicon high-voltage diodes by improved current transient spectroscopy (2022) Bergmann L, Pobegen G, Schlogl D, Schulze H, Weber HB, Krieger M Conference contribution Intrinsic color centers in 4H-silicon carbide formed by heavy ion implantation and annealing (2021) Kobayashi T, Rühl M, Lehmeyer J, Zimmermann L, Krieger M, Weber HB Journal article, Letter Epitaxial Graphene on silicon carbide as a tailorable metal-semiconductor interface (2021) Krieger M, Weber HB Book chapter / Article in edited volumes Removing the orientational degeneracy of the TS defect in 4H-SiC by electric fields and strain (2021) Rühl M, Lehmeyer J, Nagy R, Weißer M, Bockstedte M, Krieger M, Weber HB Journal article, Letter NOMAD CAMELS - Configurable Application for Measurements, Experiments and Laboratory Systems (2021) Lehmeyer J, Fuchs A, Krieger M, Weber HB Other publication type, GitHub Repository Noncovalent Functionalization and Passivation of Black Phosphorus with Optimized Perylene Diimides for Hybrid Field Effect Transistors (2020) Lloret V, Nuin E, Kohring M, Wild S, Löffler M, Neiß C, Krieger M, et al. Journal article Stark Tuning of the Silicon Vacancy in Silicon Carbide (2020) Rühl M, Bergmann L, Krieger M, Weber HB Journal article, Letter On the origin of drain current transients and subthreshold sweep hysteresis in 4H-SiC MOSFETs (2019) Rasinger F, Hauck M, Rescher G, Aichinger T, Weber HB, Krieger M, Pobegen G Journal article