Dr. Michael Krieger

Chair of Applied Physics (LAP)

Reduction of implantation-induced point defects by germanium ions in n-type 4H-SiC (2015) Sledziewski T, Ellrott G, Rösch W, Weber HB, Krieger M Journal article Characterization of Ge-doped homoepitaxial layers grown by chemical vapor deposition (2014) Sledziewski T, Beljakowa S, Alassaad K, Kwasnicki P, Arvinte R, Juillaguet S, Zielinski M, et al. Journal article, Original article Electrical nanocharacterization of epitaxial graphene/silicon carbide Schottky contacts (2014) Giannazzo F, Hertel S, Albert A, La Magna A, Roccaforte F, Krieger M, Weber HB Journal article Persistent Conductivity in n-type 3C-SiC Observed at Low Temperatures (2014) Beljakowa S, Hauck M, Bockstedte MG, Fromm F, Hundhausen M, Nagasawa H, Weber HB, et al. Journal article Monolithic circuits with epitaxial graphene/silicon carbide transistors (2014) Hertel S, Krieger M, Weber HB Journal article Epitaxial graphene as an electrode material: a transistor testbed for organic and all-carbon semiconductors (2014) Bayaya E, Waldmann D, Krieger M, Weber HB Journal article Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics (2012) Hertel S, Waldmann D, Jobst J, Albert A, Albrecht M, Krieger M, Reshanov S, et al. Journal article, Letter Gated Epitaxial Graphene Devices (2012) Waldmann D, Jobst J, Speck F, Seyller T, Krieger M, Weber HB Journal article Implanted bottom gate for epitaxial graphene on silicon carbide (2012) Waldmann D, Jobst J, Fromm F, Speck F, Seyller T, Krieger M, Weber HB Journal article A switch for epitaxial graphene electronics: Utilizing the silicon carbide substrate as transistor channel (2012) Krach F, Hertel S, Waldmann D, Jobst J, Krieger M, Reshanov S, Schoner A, Weber HB Journal article, Letter