Prof. Dr. Heiner Ryssel

Technische Fakultät

MOCVD of titanium dioxide on the basis of new precursors (2002) Leistner T, Lehmbacher K, Härter P, Schmidt C, Bauer A, Frey L, Ryssel H Journal article, Original article Investigation of lanthanum contamination from a lanthanated tungsten ion source (2002) Häublein V, Frey L, Ryssel H, Walser H Conference contribution, Conference Contribution Investigation of implantation-induced defects in thin gate oxides using low field tunnel currents (2002) Jank M, Frey L, Bauer A, Ryssel H Conference contribution, Conference Contribution Influence of photoresist pattern on charging damage during high current ion implantation (2002) Dirnecker T, Ruf A, Frey L, Beyer A, Bauer A, Henke D, Ryssel H Conference contribution, Conference Contribution ENCOTION - A new simulation tool for energetic contamination analysis (2002) Häublein V, Frey L, Ryssel H Conference contribution, Conference Contribution Different ion implanted edge terminations for Schottky diodes on SiC (2002) Weiss R, Frey L, Ryssel H Conference contribution, Conference Contribution Platinum contamination issues in ferroelectric memories (2002) Boubekeur H, Mikolajick T, Pamler W, Höpfner J, Frey L, Ryssel H Journal article, Original article Erlanger Berichte Mikroelektronik (2002) Frey L, Ryssel H Edited Volume Effect of barium contamination on gate oxide integrity in high-k dram (2002) Boubekeur H, Mikolajick T, Bauer A, Frey L, Ryssel H Journal article, Original article Fabrication of silicon aperture probes for scanning near-field optical microscopy by focused ion beam nano machining (2001) Lehrer C, Frey L, Petersen S, Sulzbach T, Ohlsson O, Dziomba T, Danzebrink H, Ryssel H Journal article, Original article