Prof. Dr. Heiner Ryssel

Technische Fakultät

Limitations of focused ion beam nanomachining (2001) Lehrer C, Frey L, Petersen S, Ryssel H Journal article, Original article Electrical reliability aspects of through the gate implanted MOS structures with thin oxides (2001) Jank MPM, Lemberger M, Bauer A, Frey L, Ryssel H Journal article, Original article Impact of platinum contamination on ferroelectric memories (2001) Boubekeur H, Mikolajick T, Nagel N, Dehm C, Pamler W, Bauer A, Frey L, Ryssel H Conference contribution, Conference Contribution Tungsten, nickel, and molybdenum Schottky diodes with different edge termination (2001) Weiss R, Frey L, Ryssel H Journal article, Original article Barium, strontium and bismuth contamination in CMOS processes (2001) Boubekeur H, Mikolajick T, Höpfner J, Dehm C, Pamler W, Steiner J, Kilian G, et al. Authored book, Volume of book series Aspects of barium contamination in high dielectric dynamic random access memories (2000) Boubekeur H, Höpfner J, Mikolajick T, Dehm C, Frey L, Ryssel H Journal article, Original article Phosphorus Ion Shower Implantation for special power IC applications (2000) Kröner F, Schork R, Frey L, Burenkov A, Ryssel H Conference contribution, Conference Contribution Investigation of molybdenum contamination in 11B+ and 31P+ implants (2000) Funk K, Häublein V, Chakor H, Ameen M, Frey L, Ryssel H, Ramirez A Conference contribution, Conference Contribution Gate oxide damage due to through the gate implantation in MOS-structures with ultrathin and standard oxides (2000) Jank M, Lemberger M, Frey L, Ryssel H Conference contribution, Conference Contribution Enhanced depth-resolution analysis with medium energy ion scattering (meis) for shallow junction profiling (2000) Tajima J, Park Y, Fujita M, Takai M, Schork R, Frey L, Ryssel H Conference contribution, Conference Contribution