Prof. Dr.-Ing. Jörg Schulze

Lehrstuhl für Elektronische Bauelemente

Towards electrical detection of plasmons in all-silicon pin-diodes (2012) Fischer IA, Wu JL, Vogelgesang R, Schulze J Journal article Epitaxially grown indium phosphide quantum dots on a virtual Ge substrate realized on Si(001) (2012) Wiesner M, Bommer M, Schulz WM, Etter M, Werner J, Oehme M, Schulze J, et al. Journal article Room-temperature electroluminescence from tensile strained double-heterojunction Ge pin LEDs on Si substrates (2012) Kaschel M, Schmid M, Gollhofer M, Werner J, Oehme M, Schulze J Conference contribution Dual spherical spline: A new representation of ruled surface optimization (2012) Zhou Y, Schulze J, Schäffler S Conference contribution Electrical spin injection and transport in germanium (2011) Zhou Y, Han W, Chang LT, Xiu F, Wang M, Oehme M, Fischer IA, et al. Journal article Room temperature direct band-gap emission from an unstrained Ge p-i-n LED on Si (2011) Arguirov T, Kittler M, Oehme M, Abrosimov NV, Kasper E, Schulze J Conference contribution Tool path planning in flank milling based on dual spherical spline (2011) Zhou Y, Schulze J, Schäffler S Conference contribution Crystalline Ge1-xSnx heterostructures in lateral high-speed devices (2010) Jeschke S, Pfeiffer O, Schulze J, Wilke M Conference contribution Blade geometry design with kinematic ruled surface approximation (2010) Zhou Y, Schulze J, Schäffler S Conference contribution Very high room-temperature peak-to-valley current ratio in Si Esaki tunneling diodes (March 2010) (2010) Oehme M, Sarlija M, Haehnel D, Kaschel M, Werner J, Kasper E, Schulze J Journal article