Prof. Dr.-Ing. Jörg Schulze

Lehrstuhl für Elektronische Bauelemente

A 2x2 Pixel Array Camera based on a Backside Illuminated Ge-on-Si Photodetector (2019) Kollner AC, Yu Z, Oehme M, Anders J, Kaschel M, Schulze J, Burghartz JN Conference contribution Back-end-of-line CMOS-compatible diode fabrication with pure boron deposition down to 50 °C (2019) Knežević T, Suligoj T, Liu X, Nanver LK, Elsayed A, Dick JF, Schulze J Conference contribution PrxCa1-xMnO3-Based Memory and Si Time-Keeping Selector for Area and Energy Efficient Synapse (2019) Das B, Lele A, Kumbhare P, Schulze J, Ganguly U Journal article A Monolithically Integrated 80-GHz Full-Wave Rectenna With Silicon Schottky Diodes Under MOTT Operation (2019) Zhang W, Kasper E, Schulze J Conference contribution Insulated Gate Bipolar Transistors based on Pure Boron Collectors (2019) Elsayed A, Dick JF, Schulze J Conference contribution An 82-GHz 14.6-mW Output Power Silicon Impact Ionization Avalanche Transit Time Transmitter with Monolithically Integrated Coplanar Waveguide Patch Antenna (2019) Zhang W, Kasper E, Schulze J Journal article Magnetic characterization of a Mn based ferromagnet on SixGe(1-x-y)Sny with high Sn content (2019) Funk HS, Kern M, Weisshaupt D, Sürgers C, Fischer IA, Oehme M, Van Slageren J, Schulze J Conference contribution Integrated Collinear Refractive Index Sensor with Ge PIN Photodiodes (2018) Augel L, Kawaguchi Y, Bechler S, Koerner R, Schulze J, Uchida H, Fischer IA Journal article Electrical characterization of n-doped SiGeSn diodes with high Sn content (2018) Clausen CJ, Fischer IA, Weisshaupt D, Baerwolf F, Tillack B, Colston G, Myronov M, et al. Journal article Enhancement of Ge-based p-channel vertical FET performance by channel engineering using planar doping and a Ge/Si x Ge1-x-ySn y heterostructure model for low power FET applications (2018) Elogail Y, Fischer IA, Wendav T, Schulze J Journal article