Prof. Dr.-Ing. Jörg Schulze

Lehrstuhl für Elektronische Bauelemente

Fabrication and simulation of vertical Ge-based P-channel planar-doped barrier FETs with 40 nm channel length (2017) Elogail Y, Elkhouly K, Fischer I, Kostecki K, Schulze J Conference contribution Charge Trapping Analysis of Metal/Al2O3/SiO2/Si, Gate Stack for Emerging Embedded Memories (2017) Khosla R, Rolseth EG, Kumar P, Vadakupudhupalayam SS, Sharma SK, Schulze J Journal article Luminescence of strained Ge on GeSn virtual substrate grown on Si (001) (2017) Schwartz B, Oehme M, Koerner R, Bechler S, Schulze J, Kittler M Conference contribution Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling (2016) Wendav T, Fischer IA, Virgilio M, Capellini G, Oliveira F, Cerqueira MF, Benedetti A, et al. Journal article Sub-0.2 V impact ionization in Si n-i-p-i-n diode (2016) Das B, Sushama S, Schulze J, Ganguly U Journal article Small-signal IMPATT diode characterization for mm-wave power generation in monolithic scenarios (2016) Zhang W, Oehme M, Matthies K, Stefani V, Raju AI, Kasper E, Schulze J Conference contribution S-parameter based device-level C-V measurement of p-i-n single-drift IMPATT diode for millimeter-wave applications (2016) Zhang W, Oehme M, Kostecki K, Matthies K, Stefani V, Raju AI, Noll D, et al. Conference contribution Electrical detection of spin transport in Si two-dimensional electron gas systems (2016) Chang LT, Fischer IA, Tang J, Wang CY, Yu G, Fan Y, Murata K, et al. Journal article Contact resistivities of antimony-doped n-type Ge1-xSn x (2016) Srinivasan VSS, Fischer IA, Augel L, Hornung A, Koerner R, Kostecki K, Oehme M, et al. Journal article Compositional dependence of the band-gap of Ge1-x-YSixSny alloys (2016) Wendav T, Fischer IA, Montanari M, Zoellner MH, Klesse W, Capellini G, Von Den Driesch N, et al. Journal article