Prof. Dr.-Ing. Jörg Schulze

Lehrstuhl für Elektronische Bauelemente

S-parameter characterization and lumped-element modelling of millimeter-wave single-drift impact-ionization avalanche transit-time diode (2016) Zhang W, Yamamoto Y, Oehme M, Matthies K, Raju AI, Srinivasan VSS, Koerner R, et al. Journal article Ge-on-Si PIN-photodetectors with Al nanoantennas: The effect of nanoantenna size on light scattering into waveguide modes (2016) Fischer IA, Augel L, Kropp T, Jitpakdeebodin S, Franz N, Oliveira F, Rolseth E, et al. Journal article Analysis of EL emitted by LEDs on Si substrates containing GeSn/Ge multi quantum wells as active layers (2016) Schwartz B, Saring P, Arguirov T, Oehme M, Kostecki K, Kasper E, Schulze J, Kittler M Conference contribution Ge and GeSn light emitters on Si (2016) Oehme M, Gollhofer M, Kostecki K, Koerner R, Bechler S, Widmann D, Arguirov T, et al. Conference contribution Growth and characterization of SiGeSn quantum well photodiodes (2015) Fischer IA, Wendav T, Augel L, Jitpakdeebodin S, Oliveira F, Benedetti A, Stefanov S, et al. Journal article Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors (2015) Schulze J, Blech A, Datta A, Fischer IA, Haehnel D, Naasz S, Rolseth E, Tropper EM Journal article Absorption coefficients of GeSn extracted from PIN photodetector response (2015) Ye K, Zhang W, Oehme M, Schmid M, Gollhofer M, Kostecki K, Widmann D, et al. Journal article Systematic characterization of Silicon IMPATT diode for Monolithic E-band amplifier design (2015) Zhang W, Oehme M, Kostecki K, Matthies K, Stefani V, Kasper E, Schulze J Conference contribution Tuning the Ge(Sn) tunneling FET: Influence of drain doping, short channel, and Sn content (2015) Haehnel D, Fischer IA, Hornung A, Koellner AC, Schulze J Journal article Plasmonics-integrated Ge PIN-photodetectors: Efficiency enhancement by Al nanoantennas and plasmon detection (2015) Fischer IA, Augel L, Jitpakdeebodin S, Franz N, Fleischer S, Schulze J Conference contribution