Prof. Dr.-Ing. Jörg Schulze

Lehrstuhl für Elektronische Bauelemente

Electrically pumped lasing from Ge Fabry-Perot resonators on Si (2015) Koerner R, Oehme M, Gollhofer M, Schmid M, Kostecki K, Bechler S, Widmann D, et al. Journal article Electroluminescence of GeSn/Ge MQW LEDs on Si substrate (2015) Schwartz B, Oehme M, Kostecki K, Widmann D, Gollhofer M, Koerner R, Bechler S, et al. Journal article Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si (2014) Fischer IA, Chang LT, Suergers C, Rolseth E, Reiter S, Stefanov S, Chiussi S, et al. Journal article High speed vertical GeSn photodiodes on Si (2014) Gollhofer M, Oehme M, Kostecki K, Ye K, Bechler S, Ulbricht K, Schmid M, et al. Conference contribution Electroluminescence of germanium LEDs on silicon: Influence of antimony doping (2014) Schwartz B, Klossek A, Kittler M, Oehme M, Kasper E, Schulze J Journal article A monolithic integrated 85 GHz schottky rectenna with dynamic tuning range of the conversion voltage (2014) Zhang W, Kasper E, Oehme M, Kaschel M, Stefani V, Schulze J Conference contribution Structure and composition of Silicon-Germanium-Tin microstructures obtained through Mask Projection assisted Pulsed Laser Induced Epitaxy (2014) Stefanov S, Serra C, Benedetti A, Carlos Conde J, Werner J, Oehme M, Schulze J, et al. Journal article Effect of heavy doping and strain on the electroluminescence of Ge-on-Si light emitting diodes (2014) Schmid M, Oehme M, Gollhofer M, Koerner R, Kaschel M, Kasper E, Schulze J Journal article Epitaxial growth of strained and unstrained GeSn alloys up to 25% Sn (2014) Oehme M, Kostecki K, Schmid M, Oliveira F, Kasper E, Schulze J Journal article GeSn heterojunction LEDs on Si substrates (2014) Oehme M, Kostecki K, Arguirov T, Mussler G, Ye K, Gollhofer M, Schmid M, et al. Journal article