Prof. Dr.-Ing. Jörg Schulze

Lehrstuhl für Elektronische Bauelemente

GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz (2014) Oehme M, Kostecki K, Ye K, Bechler S, Ulbricht K, Schmid M, Kaschel M, et al. Journal article Luminescence from germanium and germanium on silicon (2014) Arguirov T, Kittler M, Oehme M, Abrosimov NV, Vyvenko OF, Kasper E, Schulze J Conference contribution Extraction of GeSn absorption coefficients from photodetector response (2014) Ye K, Zhang W, Oehme M, Schmid M, Gollhofer M, Kostecki K, Widmann D, et al. Conference contribution Spin accumulation in n-Ge on Si with sputtered Mn5Ge 3C0.8-contacts (2014) Fischer IA, Chang LT, Sürgers C, Chiussi S, Wang KL, Schulze J Conference contribution A reliable 40 GHz opto-electrical system for characterization of frequency response of Ge PIN photo detectors (2014) Zhang W, Ye K, Bechler S, Ulbricht K, Oehme M, Kasper E, Schulze J Conference contribution Vertical Ge heterojunction gate-ail-around tunneling field effect transistors with Ge0.92Sn0.08-δ-Layers at the tunneling junction (2014) Schulze J, Blech A, Fischer IA, Hähnel D, Naasz S, Tropper EM Conference contribution Plasmonic waveguiding and detection structures integrated with Ge PIN-diodes (2014) Fischer IA, Augel L, Ray D, Schulze J Conference contribution UV excimer laser assisted heteroepitaxy of (Si)GeSn on Si(100) (2014) Chiussi S, Stefanov S, Benedetti A, Serra C, Buca D, Schulze J, Gonzalez P Conference contribution Direct bandgap narrowing in Ge LED's on Si substrates (2013) Oehme M, Gollhofer M, Widmann D, Schmid M, Kaschel M, Kasper E, Schulze J Journal article Dislocation luminescence in highly doped degenerated germanium at room temperature (2013) Arguirov T, Vyvenko O, Oehme M, Schulze J, Kittler M Journal article