Development of semiconductor sensors based on silicon carbide
Internally funded project
Start date : 01.10.2014
End date : 15.06.2018
Project details
Short description
Silicon carbide offers several benefits compared to silicon due to strong chemical bonds for the use as semiconductor material. Especially the higher critical electric field and the lower intrinsic carrier concentration are beneficial for power elctronics. These properties as well as the high thermal conductivity and the wide bandgap may further be used for advanced sensor devices.
Scientific Abstract
Abstract (fachliche Beschreibung), intern - Englsich