Bimodal CAFM TDDB distributions in polycrystalline HfO2 gate stacks: The role of the interfacial layer and grain boundaries
Iglesias V, Martin-Martinez J, Porti M, Rodriguez R, Nafria M, Aymerich X, Erlbacher T, Rommel M, Murakami K, Bauer AJ, Frey L, Bersuker G (2013)
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2013
Journal
Book Volume: 109
Pages Range: 129-132
DOI: 10.1016/j.mee.2013.03.022
Authors with CRIS profile
Involved external institutions
SEMATECH
United States (USA) (US)
Autonomous University of Barcelona (UAB) / Universitat Autònoma de Barcelona
Spain (ES)
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)
Germany (DE)
United States (USA) (US)
Autonomous University of Barcelona (UAB) / Universitat Autònoma de Barcelona
Spain (ES)
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)
Germany (DE)
How to cite
APA:
Iglesias, V., Martin-Martinez, J., Porti, M., Rodriguez, R., Nafria, M., Aymerich, X.,... Bersuker, G. (2013). Bimodal CAFM TDDB distributions in polycrystalline HfO2 gate stacks: The role of the interfacial layer and grain boundaries. Microelectronic Engineering, 109, 129-132. https://doi.org/10.1016/j.mee.2013.03.022
MLA:
Iglesias, Vanessa, et al. "Bimodal CAFM TDDB distributions in polycrystalline HfO2 gate stacks: The role of the interfacial layer and grain boundaries." Microelectronic Engineering 109 (2013): 129-132.
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