A Monolithically Integrated 80-GHz Full-Wave Rectenna With Silicon Schottky Diodes Under MOTT Operation

Zhang W, Kasper E, Schulze J (2019)

Publication Type: Conference contribution

Publication year: 2019

Publisher: Institute of Electrical and Electronics Engineers Inc.

Conference Proceedings Title: 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings

Event location: Guangzhou CN

ISBN: 9781728107165

DOI: 10.1109/IEEE-IWS.2019.8804127

Abstract

A monolithically integrated rectenna (rectifying antenna) operating at 80 GHz with a total chip area of 4 mm2 is implemented using SIMMWIC (Silicon-based Monolithic Microwave Integrated Circuit) technology. By applying four embedded 6 μm2 Schottky diodes under MOTT operation, a full-wave bridge rectifier circuit is efficiently integrated to a bow-tie antenna. Under RF-excitation in frequency range of 75 - 90 GHz, a receiving profile of conversion voltage around 80 GHz is clearly characterized, which is quite well consistent with the bandwidth property of the integrated bow-tie antenna. Under biasing current of 10 nA, the implemented rectenna could achieve maximal conversion voltage of 50 mV at the detecting distance of 10 cm.

Authors with CRIS profile

Jörg Schulze

Involved external institutions

Universität Stuttgart DE Germany (DE)

How to cite

APA:

Zhang, W., Kasper, E., & Schulze, J. (2019). A Monolithically Integrated 80-GHz Full-Wave Rectenna With Silicon Schottky Diodes Under MOTT Operation. In 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings. Guangzhou, CN: Institute of Electrical and Electronics Engineers Inc..

MLA:

Zhang, Wogong, Erich Kasper, and Jörg Schulze. "A Monolithically Integrated 80-GHz Full-Wave Rectenna With Silicon Schottky Diodes Under MOTT Operation." Proceedings of the 2019 IEEE MTT-S International Wireless Symposium, IWS 2019, Guangzhou Institute of Electrical and Electronics Engineers Inc., 2019.

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