S-parameter based device-level C-V measurement of p-i-n single-drift IMPATT diode for millimeter-wave applications

Zhang W, Oehme M, Kostecki K, Matthies K, Stefani V, Raju AI, Noll D, Srinivasan VS, Korner R, Kasper E, Schulze J (2016)

Publication Type: Conference contribution

Publication year: 2016

Publisher: Institute of Electrical and Electronics Engineers Inc.

Conference Proceedings Title: 2016 IEEE MTT-S International Wireless Symposium, IWS 2016

Event location: Shanghai CN

ISBN: 9781509006960

DOI: 10.1109/IEEE-IWS.2016.7585419

Abstract

Two different approaches of capacitance-voltage (C-V) measurement were applied to the fabricated single-drift (SD) impact-ionization avalanche transit-time (IMPATT) structures. From both the C-V results, the carrier concentrations of depleted space-charge-region (SCR) width characteristics were calculated. According to the epitaxial thickness and the doping concentration of the lightly n-doped layer, the approach applied to a 30 × 2 μm2 IMPATT device, which is based on small-signal S-parameter characterization (0.04-40 GHz), showed better agreement compared with the approach applied to a C-V structure (0.64 mm2) using the conventional low frequency (1 MHz) C-V instrument. Additionally, the E-band IMPATT operation of the 30 × 2 μm2 device has been well modelled with the capacitance value extracted from the S-parameter based C-V measurement. The good agreement between device modelling and measurement within frequency range 0.04-110 GHz shows the reliability of the small-signal S-parameter device-level C-V measurement for real mm-wave application scenarios.

Authors with CRIS profile

Jörg Schulze

Involved external institutions

Universität Stuttgart DE Germany (DE)

How to cite

APA:

Zhang, W., Oehme, M., Kostecki, K., Matthies, K., Stefani, V., Raju, A.I.,... Schulze, J. (2016). S-parameter based device-level C-V measurement of p-i-n single-drift IMPATT diode for millimeter-wave applications. In 2016 IEEE MTT-S International Wireless Symposium, IWS 2016. Shanghai, CN: Institute of Electrical and Electronics Engineers Inc..

MLA:

Zhang, Wogong, et al. "S-parameter based device-level C-V measurement of p-i-n single-drift IMPATT diode for millimeter-wave applications." Proceedings of the 2016 IEEE MTT-S International Wireless Symposium, IWS 2016, Shanghai Institute of Electrical and Electronics Engineers Inc., 2016.

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