Systematic characterization of Silicon IMPATT diode for Monolithic E-band amplifier design

Zhang W, Oehme M, Kostecki K, Matthies K, Stefani V, Kasper E, Schulze J (2015)

Publication Type: Conference contribution

Publication year: 2015

Publisher: Institute of Electrical and Electronics Engineers Inc.

Pages Range: 135-138

Conference Proceedings Title: 2015 German Microwave Conference, GeMiC 2015

Event location: Nuremberg DE

ISBN: 9783981266863

DOI: 10.1109/GEMIC.2015.7107771

Abstract

A systematic characterization procedure of Silicon IMPATT (IMPact ionization Avalanche Transit-Time) diode is introduced in this work. DC characterization consists of currentvoltage (I-V) and capacity-voltage (C-V) measurements. RF small signal characterization is performed by the vector network analyzer (VNA). By combining the measured S-parameters of the 30×2 μm2 IMPATT diode and simulated data of a short ended coplanar waveguide (CPW), an E-band amplifier design flow based on SIMMWIC (Silicon Monolithic mm-Wave Integrated Circuits) technology is as proof of concept presented. According to the simulation results, the maximum gain of the designed amplifier achieves 34.4 dB at 67.8 GHz with 30 mA biasing current. With different biasing currents (20 ∼ 40 mA) the avalanche frequency of the embedded IMPATT diode could be varied from 71.3 GHz to 91.5 GHz. This leads to an 8.6 GHz (62.8 ∼ 71.4 GHz) dynamic tuning range of the amplification frequency.

Authors with CRIS profile

Jörg Schulze

Involved external institutions

Universität Stuttgart DE Germany (DE)

How to cite

APA:

Zhang, W., Oehme, M., Kostecki, K., Matthies, K., Stefani, V., Kasper, E., & Schulze, J. (2015). Systematic characterization of Silicon IMPATT diode for Monolithic E-band amplifier design. In 2015 German Microwave Conference, GeMiC 2015 (pp. 135-138). Nuremberg, DE: Institute of Electrical and Electronics Engineers Inc..

MLA:

Zhang, Wogong, et al. "Systematic characterization of Silicon IMPATT diode for Monolithic E-band amplifier design." Proceedings of the 9th German Microwave Conference, GeMiC 2015, Nuremberg Institute of Electrical and Electronics Engineers Inc., 2015. 135-138.

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