High speed vertical GeSn photodiodes on Si
Gollhofer M, Oehme M, Kostecki K, Ye K, Bechler S, Ulbricht K, Schmid M, Kaschel M, Körner R, Zhang W, Kasper E, Schulze J (2014)
Publication Type: Conference contribution
Publication year: 2014
Publisher: IEEE Computer Society
Pages Range: 19-20
Conference Proceedings Title: IEEE International Conference on Group IV Photonics GFP
Event location: Paris
ISBN: 9781479922833
DOI: 10.1109/Group4.2014.6962007
Abstract
Vertical GeSn pin photodiodes with Sn content of 0 %, 2 % and 4.2 %, resp., grown with molecular beam epitaxy on thin Ge virtual substrates on Si are investigated by using the electrical and optoelectrical methods: direct current, light responsivity and optical high frequency (40 GHz). The vertical photodiodes were fabricated with a double mesa process. The mesa radii are between 5 μm and 80 μm. For a laser wavelength of 1550 nm an increase of the optical responsivities (84 mA/W - 218 mA/W) for the vertical photodiodes with thin (300 nm) absorbers as function of the Sn content is found. The optical high frequency bandwidth of all photodiodes with 5 μm radius is above 40 GHz at enough reverse voltage [1].
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Germany (DE)How to cite
APA:
Gollhofer, M., Oehme, M., Kostecki, K., Ye, K., Bechler, S., Ulbricht, K.,... Schulze, J. (2014). High speed vertical GeSn photodiodes on Si. In IEEE International Conference on Group IV Photonics GFP (pp. 19-20). Paris, FR: IEEE Computer Society.
MLA:
Gollhofer, Martin, et al. "High speed vertical GeSn photodiodes on Si." Proceedings of the 11th International Conference on Group IV Photonics, GFP 2014, Paris IEEE Computer Society, 2014. 19-20.
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