A monolithic integrated 85 GHz schottky rectenna with dynamic tuning range of the conversion voltage
Zhang W, Kasper E, Oehme M, Kaschel M, Stefani V, Schulze J (2014)
Publication Type: Conference contribution
Publication year: 2014
Publisher: Institute of Electrical and Electronics Engineers Inc.
Conference Proceedings Title: RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz
Event location: Hefei
ISBN: 9781479955039
DOI: 10.1109/RFIT.2014.6933240
Abstract
In this paper, the latest research results for design and characterization of an 85 GHz fully monolithic integrated schottky rectenna (rectifying antenna) using SiMMWIC (Silicon Monolithic Mm-Wave Integrated Circuits) technology are presented. Under RF excitation in frequency range of 75 ∼ 90 GHz a sharp receiving profile at 85 GHz of the designed rectenna is clearly characterized. With different bias currents (0.1 μA 0.44 mA) the working point of the embedded schottky diode (cut-off frequency 0.5 THz at 0 V) could be dynamically tuned for the optimal conversion voltage. The corresponding tuning range of the conversion voltage could be varied from 1 mV to 17 mV at 85 GHz.
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APA:
Zhang, W., Kasper, E., Oehme, M., Kaschel, M., Stefani, V., & Schulze, J. (2014). A monolithic integrated 85 GHz schottky rectenna with dynamic tuning range of the conversion voltage. In RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz. Hefei, CN: Institute of Electrical and Electronics Engineers Inc..
MLA:
Zhang, Wogong, et al. "A monolithic integrated 85 GHz schottky rectenna with dynamic tuning range of the conversion voltage." Proceedings of the 2014 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2014, Hefei Institute of Electrical and Electronics Engineers Inc., 2014.
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