A reliable 40 GHz opto-electrical system for characterization of frequency response of Ge PIN photo detectors
Zhang W, Ye K, Bechler S, Ulbricht K, Oehme M, Kasper E, Schulze J (2014)
Publication Type: Conference contribution
Publication year: 2014
Publisher: IEEE Computer Society
Pages Range: 117-118
Conference Proceedings Title: 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
Event location: SGP
ISBN: 9781479954285
DOI: 10.1109/ISTDM.2014.6874649
Abstract
A reliable measurement setup was built with VNA principle and properly calibrated for opto-electrical characterization of the in-house fabricated Ge PIN PDs. At a bias of - 1 V the 3-dB BW above 40 GHz for device radius of 5 μm was observed in the wavelength of 1550 nm. The good agreement of the 3-dB BWs between VNA and HET proves the reliability of the investigated measurement setup. The setup was recently employed to characterize novel GeSnPDs [6]. © 2014 IEEE.
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APA:
Zhang, W., Ye, K., Bechler, S., Ulbricht, K., Oehme, M., Kasper, E., & Schulze, J. (2014). A reliable 40 GHz opto-electrical system for characterization of frequency response of Ge PIN photo detectors. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 (pp. 117-118). SGP: IEEE Computer Society.
MLA:
Zhang, Wogong, et al. "A reliable 40 GHz opto-electrical system for characterization of frequency response of Ge PIN photo detectors." Proceedings of the 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, SGP IEEE Computer Society, 2014. 117-118.
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