Dislocation and node states in bilayer graphene systems

Weckbecker D, Gupta R, Rost F, Sharma S, Shallcross S (2019)

Publication Type: Journal article

Publication year: 2019

Journal

Physical Review B American Physical Society

Book Volume: 99

Journal Issue: 19

DOI: 10.1103/PhysRevB.99.195405

Abstract

We investigate the electronic structure of realistic partial dislocation networks in bilayer graphene that feature annihilating, wandering, and intersecting partial lines. We find charge accumulation states at partials that are sensitive to Fermi energy and partial Burgers vector but not to the screw versus edge character of the partial. These states are shown to be current carrying, with the current density executing a spiral motion along the dislocation line with a strong interlayer component to the current. Close to the Dirac point, localization on partials switches to localization on intersections of partials, with a corresponding complex current flow around the nodes.

Authors with CRIS profile

Dominik Weckbecker Lehrstuhl für Theoretische Festkörperphysik Reena Gupta Sonderforschungsbereich 953/3 Synthetische Kohlenstoffallotrope Fabian Rost Lehrstuhl für Theoretische Festkörperphysik Sam Shallcross Lehrstuhl für Theoretische Festkörperphysik

Involved external institutions

Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie im Forschungsverbund Berlin e.V. / Max Born Institute for Nonlinear Optics and Short Pulse Spectroscopy

Germany (DE)

How to cite

APA:

Weckbecker, D., Gupta, R., Rost, F., Sharma, S., & Shallcross, S. (2019). Dislocation and node states in bilayer graphene systems. Physical Review B, 99(19). https://doi.org/10.1103/PhysRevB.99.195405

MLA:

Weckbecker, Dominik, et al. "Dislocation and node states in bilayer graphene systems." Physical Review B 99.19 (2019).

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