Metal ion-doped sol-gel film for emulating synaptic activity and short-term non-volatile memory
Nych K, Baek E, Baek CK, Ibarlucea B, Baraban L, Cuniberti G (2019)
Publication Type: Conference contribution
Publication year: 2019
Publisher: Institute of Electrical and Electronics Engineers Inc.
Pages Range: 795-798
Conference Proceedings Title: 2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019
Event location: Genoa, ITA
ISBN: 9781728109961
DOI: 10.1109/ICECS46596.2019.8964926
Abstract
We propose a hybrid device substituting the software synapse in artificial neural networks with an individual hardware transistor unit. The unit merges a silicon nanowire semiconductor channel with a metal-ion doped sol-gel film as hybrid gate of the transistor. The film, amorphous and transparent, shows a memristive property due to ion redistribution under bias, emulating synaptic plasticity with pulsed gate stimulation.
Involved external institutions
Technische Universität Dresden
Germany (DE)
Pohang University of Science and Technology (POSTECH)
Korea, Republic of (KR)
Germany (DE)
Pohang University of Science and Technology (POSTECH)
Korea, Republic of (KR)
How to cite
APA:
Nych, K., Baek, E., Baek, C.K., Ibarlucea, B., Baraban, L., & Cuniberti, G. (2019). Metal ion-doped sol-gel film for emulating synaptic activity and short-term non-volatile memory. In 2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019 (pp. 795-798). Genoa, ITA: Institute of Electrical and Electronics Engineers Inc..
MLA:
Nych, Khrystyna, et al. "Metal ion-doped sol-gel film for emulating synaptic activity and short-term non-volatile memory." Proceedings of the 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019, Genoa, ITA Institute of Electrical and Electronics Engineers Inc., 2019. 795-798.
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