Heteroepitaxial growth of tetragonal Mn2.7-xFexGa1.3 (0 ≤ x ≤ 1.2) Heusler films with perpendicular magnetic anisotropy

Kalache A, Markou A, Selle S, Hoeche T, Sahoo R, Fecher GH, Felser C (2017)


Publication Type: Journal article

Publication year: 2017

Journal

Book Volume: 5

Article Number: 096102

Journal Issue: 9

DOI: 10.1063/1.4991468

Abstract

This work reports on the structural and magnetic properties of Mn2.7-xFexGa1.3 Heusler films with different Fe content x (0 ≤ x ≤ 1.2). The films were deposited heteroepitaxially on MgO single crystal substrates, by magnetron sputtering. Mn2.7-xFexGa1.3 films with the thickness of 35 nm were crystallized in a tetragonal D022 structure with (001) preferred orientation. Tunable magnetic properties were achieved by changing the Fe content x. Mn2.7-xFexGa1.3 thin films exhibit high uniaxial anisotropy Ku ≥ 1.4 MJ/m3, coercivity from 0.95 to 0.31 T, and saturation magnetization from 290 to 570 kA/m. The film with Mn1.6Fe1.1Ga1.3 composition shows high Ku of 1.47 MJ/m3 and energy product (BH)max of 37 kJ/m3 at room temperature. These findings demonstrate that Mn2.7-xFexGa1.3 films have promising properties for mid-range permanent magnet and spintronic applications.

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How to cite

APA:

Kalache, A., Markou, A., Selle, S., Hoeche, T., Sahoo, R., Fecher, G.H., & Felser, C. (2017). Heteroepitaxial growth of tetragonal Mn2.7-xFexGa1.3 (0 ≤ x ≤ 1.2) Heusler films with perpendicular magnetic anisotropy. APL Materials, 5(9). https://doi.org/10.1063/1.4991468

MLA:

Kalache, Adel, et al. "Heteroepitaxial growth of tetragonal Mn2.7-xFexGa1.3 (0 ≤ x ≤ 1.2) Heusler films with perpendicular magnetic anisotropy." APL Materials 5.9 (2017).

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